Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexMounting Type
Surface Mount
Package Type
SOD-123
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
650mV
Number of Elements per Chip
1
Diode Technology
Schottky
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
4A
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
€ 72,00
€ 0,12 Each (Supplied on a Reel) (bez PDV-a)
€ 90,00
€ 0,15 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
600
€ 72,00
€ 0,12 Each (Supplied on a Reel) (bez PDV-a)
€ 90,00
€ 0,15 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
600
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 600 - 1400 | € 0,12 | € 12,00 |
| 1500+ | € 0,11 | € 11,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexMounting Type
Surface Mount
Package Type
SOD-123
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Single
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
2
Maximum Forward Voltage Drop
650mV
Number of Elements per Chip
1
Diode Technology
Schottky
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
4A
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.


