Tehnička dokumentacija
Tehnički podaci
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DiodesZetexChannel Type
N
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
890 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.25mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
China
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,06
Each (On a Reel of 3000) (bez PDV-a)
€ 0,075
Each (On a Reel of 3000) (s PDV-om)
3000
€ 0,06
Each (On a Reel of 3000) (bez PDV-a)
€ 0,075
Each (On a Reel of 3000) (s PDV-om)
3000
Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
900 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
890 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
1.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.25mm
Typical Gate Charge @ Vgs
0.7 nC @ 4.5 V
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
China