Tehnička dokumentacija
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DiodesZetexChannel Type
N
Maximum Continuous Drain Current
407 mA
Maximum Drain Source Voltage
60 V
Package Type
X1-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
1.07mm
Typical Gate Charge @ Vgs
0.45 nC @ 4.5V
Width
0.67mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.48mm
Zemlja podrijetla
China
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Provjerite ponovno kasnije.
€ 0,08
Each (On a Reel of 10000) (bez PDV-a)
€ 0,10
Each (On a Reel of 10000) (s PDV-om)
10000
€ 0,08
Each (On a Reel of 10000) (bez PDV-a)
€ 0,10
Each (On a Reel of 10000) (s PDV-om)
10000
Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
407 mA
Maximum Drain Source Voltage
60 V
Package Type
X1-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
1.07mm
Typical Gate Charge @ Vgs
0.45 nC @ 4.5V
Width
0.67mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.48mm
Zemlja podrijetla
China