Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.1mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 11,00
€ 0,22 komadno (u pakiranju od 50) (bez PDV-a)
€ 13,75
€ 0,275 komadno (u pakiranju od 50) (s PDV-om)
Standard
50
€ 11,00
€ 0,22 komadno (u pakiranju od 50) (bez PDV-a)
€ 13,75
€ 0,275 komadno (u pakiranju od 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
50
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 50 - 550 | € 0,22 | € 11,00 |
| 600 - 1450 | € 0,11 | € 5,50 |
| 1500+ | € 0,10 | € 5,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
3.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
1.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
6.5 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1.1mm
Zemlja podrijetla
China
Detalji o proizvodu


