Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.14 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 10,50
€ 1,05 komadno (u pakiranju od 10) (bez PDV-a)
€ 13,12
€ 1,312 komadno (u pakiranju od 10) (s PDV-om)
Standard
10
€ 10,50
€ 1,05 komadno (u pakiranju od 10) (bez PDV-a)
€ 13,12
€ 1,312 komadno (u pakiranju od 10) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 10 - 20 | € 1,05 | € 10,50 |
| 30 - 120 | € 0,77 | € 7,70 |
| 130+ | € 0,67 | € 6,70 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
40 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.14 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Height
1.5mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu


