Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexMounting Type
Surface Mount
Package Type
PowerDI 5
Maximum Continuous Forward Current
5A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
250A
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
€ 4,35
€ 0,87 komadno (u pakiranju od 5) (bez PDV-a)
€ 5,44
€ 1,088 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 4,35
€ 0,87 komadno (u pakiranju od 5) (bez PDV-a)
€ 5,44
€ 1,088 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 5 - 45 | € 0,87 | € 4,35 |
| 50 - 245 | € 0,76 | € 3,80 |
| 250+ | € 0,68 | € 3,40 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexMounting Type
Surface Mount
Package Type
PowerDI 5
Maximum Continuous Forward Current
5A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Single
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
1
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
250A
Zemlja podrijetla
China
Detalji o proizvodu
Schottky Barrier Diodes, 2A to 9A, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.


