Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
700 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Typical Gate Charge @ Vgs
1.8 nC @ 5 V, 3.5 nC @ 10 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 16,00
€ 0,64 komadno (u pakiranju od 25) (bez PDV-a)
€ 20,00
€ 0,80 komadno (u pakiranju od 25) (s PDV-om)
Standard
25
€ 16,00
€ 0,64 komadno (u pakiranju od 25) (bez PDV-a)
€ 20,00
€ 0,80 komadno (u pakiranju od 25) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 25 - 125 | € 0,64 | € 16,00 |
| 150 - 725 | € 0,54 | € 13,50 |
| 750 - 1475 | € 0,48 | € 12,00 |
| 1500+ | € 0,41 | € 10,25 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
700 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
806 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Typical Gate Charge @ Vgs
1.8 nC @ 5 V, 3.5 nC @ 10 V
Width
1.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
1mm
Zemlja podrijetla
China
Detalji o proizvodu


