Fairchild ISL9V5036S3ST IGBT, 46 A 420 V, 3-Pin D2PAK (TO-263), Surface Mount
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Fairchild SemiconductorMaximum Continuous Collector Current
46 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
250 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 52,00
€ 5,20 Each (Supplied on a Reel) (bez PDV-a)
€ 65,00
€ 6,50 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
10
€ 52,00
€ 5,20 Each (Supplied on a Reel) (bez PDV-a)
€ 65,00
€ 6,50 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 10 - 95 | € 5,20 | € 26,00 |
| 100 - 245 | € 4,35 | € 21,75 |
| 250 - 495 | € 4,25 | € 21,25 |
| 500+ | € 4,20 | € 21,00 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
Fairchild SemiconductorMaximum Continuous Collector Current
46 A
Maximum Collector Emitter Voltage
420 V
Maximum Gate Emitter Voltage
±14V
Maximum Power Dissipation
250 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.67 x 9.65 x 4.83mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Detalji o proizvodu
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda