Fuji Electric 6MBI75U4B-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 35-Pin M633, PCB Mount

RS kataloški broj:: 462-833robna marka: Fuji ElectricProizvođački broj:: 6MBI75U4B-120-50
brand-logo
Prikaži sve u IGBTs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Fuji Electric

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

390 W

Package Type

M633

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

35

Transistor Configuration

3 Phase

Dimensions

122 x 62 x 17mm

Maximum Operating Temperature

+150 °C

Zemlja podrijetla

Japan

Detalji o proizvodu

IGBT Modules 6-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Informacije o stanju skladišta trenutno nisu dostupne.

Provjerite ponovno kasnije.

Informacije o stanju skladišta trenutno nisu dostupne.

P.O.A.

Fuji Electric 6MBI75U4B-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 35-Pin M633, PCB Mount

1

Dostupno u više komada 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

Fuji Electric 6MBI75U4B-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 35-Pin M633, PCB Mount
Informacije o stanju skladišta trenutno nisu dostupne.

1

Dostupno u više komada 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Fuji Electric

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

390 W

Package Type

M633

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

35

Transistor Configuration

3 Phase

Dimensions

122 x 62 x 17mm

Maximum Operating Temperature

+150 °C

Zemlja podrijetla

Japan

Detalji o proizvodu

IGBT Modules 6-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više