Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Infineon 2N7002DWH6327XTSA1
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.25mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2mm
Typical Gate Charge @ Vgs
0.4 nC @ 10 V
Height
0.8mm
Series
OptiMOS
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Provjerite ponovno kasnije.
€ 0,12
Each (On a Reel of 3000) (bez PDV-a)
€ 0,15
Each (On a Reel of 3000) (s PDV-om)
3000
€ 0,12
Each (On a Reel of 3000) (bez PDV-a)
€ 0,15
Each (On a Reel of 3000) (s PDV-om)
3000
Kupujte na veliko
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 3000 - 3000 | € 0,12 | € 360,00 |
| 6000+ | € 0,11 | € 330,00 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
500 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.25mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2mm
Typical Gate Charge @ Vgs
0.4 nC @ 10 V
Height
0.8mm
Series
OptiMOS
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda