Infineon BFP840ESDH6327XTSA1 NPN Bipolar Transistor, 35 mA, 2.25 V, 4-Pin SOT-343
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
2.25 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
75 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
2.9 V
Maximum Operating Frequency
80 GHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.8mm
Detalji o proizvodu
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
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Cijena na upit
komadno (u pakiranju od 50) (bez PDV-a)
Standard
50
Cijena na upit
komadno (u pakiranju od 50) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
50
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
2.25 V
Package Type
SOT-343
Mounting Type
Surface Mount
Maximum Power Dissipation
75 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
2.9 V
Maximum Operating Frequency
80 GHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
2 x 1.25 x 0.8mm
Detalji o proizvodu
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda