Tehnička dokumentacija
Tehnički podaci
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Pin Count
8
Transistor Configuration
Single
Forward Diode Voltage
1.2V
Mounting Type
Surface Mount
Maximum Operating Temperature
+150 °C
Maximum Drain Source Voltage
60 V
Height
1.1mm
Dimensions
59 x 92 x 18mm
Length
6.1mm
Width
5.35mm
Maximum Power Dissipation
69 W
Maximum Continuous Drain Current
100 A
Maximum Drain Source Resistance
5.9 mΩ
Proizvođač
InfineonPackage Type
TDSON
Typical Gate Charge @ Vgs
27 nC @ 10 V
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 1,31
Each (On a Reel of 5000) (bez PDV-a)
€ 1,638
Each (On a Reel of 5000) (s PDV-om)
5000
€ 1,31
Each (On a Reel of 5000) (bez PDV-a)
€ 1,638
Each (On a Reel of 5000) (s PDV-om)
5000
Tehnička dokumentacija
Tehnički podaci
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
-20 V, +20 V
Pin Count
8
Transistor Configuration
Single
Forward Diode Voltage
1.2V
Mounting Type
Surface Mount
Maximum Operating Temperature
+150 °C
Maximum Drain Source Voltage
60 V
Height
1.1mm
Dimensions
59 x 92 x 18mm
Length
6.1mm
Width
5.35mm
Maximum Power Dissipation
69 W
Maximum Continuous Drain Current
100 A
Maximum Drain Source Resistance
5.9 mΩ
Proizvođač
InfineonPackage Type
TDSON
Typical Gate Charge @ Vgs
27 nC @ 10 V