Infineon OptiMOS™ 3 N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON BSC22DN20NS3GATMA1
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
200 V
Series
OptiMOS™ 3
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
225 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.35mm
Typical Gate Charge @ Vgs
4.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 16,40
€ 0,82 Each (Supplied on a Reel) (bez PDV-a)
€ 20,50
€ 1,025 Each (Supplied on a Reel) (s PDV-om)
Proizvodno pakiranje (kolut)
20
€ 16,40
€ 0,82 Each (Supplied on a Reel) (bez PDV-a)
€ 20,50
€ 1,025 Each (Supplied on a Reel) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (kolut)
20
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
7 A
Maximum Drain Source Voltage
200 V
Series
OptiMOS™ 3
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
225 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
34 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.35mm
Typical Gate Charge @ Vgs
4.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda