Infineon SIPMOS® N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 BSP135H6327XTSA1
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
120 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-223
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 Ω
Channel Mode
Depletion
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
3.7 nC @ 5 V
Maximum Operating Temperature
+150 °C
Width
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Height
1.6mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 690,00
€ 0,69 Each (On a Reel of 1000) (bez PDV-a)
€ 862,50
€ 0,862 Each (On a Reel of 1000) (s PDV-om)
1000
€ 690,00
€ 0,69 Each (On a Reel of 1000) (bez PDV-a)
€ 862,50
€ 0,862 Each (On a Reel of 1000) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
1000
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po kolut |
|---|---|---|
| 1000 - 1000 | € 0,69 | € 690,00 |
| 2000 - 2000 | € 0,67 | € 670,00 |
| 3000+ | € 0,65 | € 650,00 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
120 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-223
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 Ω
Channel Mode
Depletion
Maximum Power Dissipation
1.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
3.7 nC @ 5 V
Maximum Operating Temperature
+150 °C
Width
3.5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Height
1.6mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda