Transistor, MOS, N ch,50V,BSS138N
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
PG-SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
360 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.4 nC @ 10 V
Height
1mm
Width
1.3mm
Informacije o stanju skladišta trenutno nisu dostupne.
Cijena na upit
komadno (u pakiranju od 100) (bez PDV-a)
Standard
100
Cijena na upit
komadno (u pakiranju od 100) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
100
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
PG-SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 Ω
Channel Mode
Enhancement
Maximum Power Dissipation
360 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.4 nC @ 10 V
Height
1mm
Width
1.3mm