Transistor, MOS, N ch,50V,BSS138N

RS kataloški broj:: 167-970robna marka: InfineonProizvođački broj:: BSS138N
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Package Type

PG-SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

360 mW

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1.4 nC @ 10 V

Height

1mm

Width

1.3mm

Možda će vas zanimati
onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1G
€ 0,25komadno (u pakiranju od 25) (bez PDV-a)

Informacije o stanju skladišta trenutno nisu dostupne.

Cijena na upit

komadno (u pakiranju od 100) (bez PDV-a)

Transistor, MOS, N ch,50V,BSS138N
Odaberite vrstu pakiranja

Cijena na upit

komadno (u pakiranju od 100) (bez PDV-a)

Transistor, MOS, N ch,50V,BSS138N

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Možda će vas zanimati
onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1G
€ 0,25komadno (u pakiranju od 25) (bez PDV-a)

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

60 V

Package Type

PG-SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 Ω

Channel Mode

Enhancement

Maximum Power Dissipation

360 mW

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

2.9mm

Typical Gate Charge @ Vgs

1.4 nC @ 10 V

Height

1mm

Width

1.3mm

Možda će vas zanimati
onsemi N-Channel MOSFET, 200 mA, 50 V, 3-Pin SOT-23 BSS138LT1G
€ 0,25komadno (u pakiranju od 25) (bez PDV-a)