Infineon OptiMOS P P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3EGATMA1

RS kataloški broj:: 825-9134robna marka: InfineonProizvođački broj:: BSZ086P03NS3EGATMA1
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

P

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

TSDSON

Series

OptiMOS P

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

3.1V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

3.4mm

Typical Gate Charge @ Vgs

43.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

3.4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 14,20

€ 0,71 komadno (u pakiranju od 20) (bez PDV-a)

€ 17,75

€ 0,888 komadno (u pakiranju od 20) (s PDV-om)

Infineon OptiMOS P P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3EGATMA1
Odaberite vrstu pakiranja

Standard

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 20.

Proizvodnja -

Dostupno u više komada 20.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 20
20€ 14,20
40€ 28,40
60€ 42,60
80€ 56,80
100€ 71,00
120€ 85,20
140€ 99,40
160€ 113,60
180€ 127,80
200€ 142,00
220€ 156,20
240€ 170,40
260€ 184,60
280€ 198,80
300€ 213,00

€ 14,20

€ 0,71 komadno (u pakiranju od 20) (bez PDV-a)

€ 17,75

€ 0,888 komadno (u pakiranju od 20) (s PDV-om)

Infineon OptiMOS P P-Channel MOSFET, 40 A, 30 V, 8-Pin TSDSON BSZ086P03NS3EGATMA1

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Standard

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 20.

Proizvodnja -

Dostupno u više komada 20.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 20
20€ 14,20
40€ 28,40
60€ 42,60
80€ 56,80
100€ 71,00
120€ 85,20
140€ 99,40
160€ 113,60
180€ 127,80
200€ 142,00
220€ 156,20
240€ 170,40
260€ 184,60
280€ 198,80
300€ 213,00

Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

P

Maximum Continuous Drain Current

40 A

Maximum Drain Source Voltage

30 V

Package Type

TSDSON

Series

OptiMOS P

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

13.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

3.1V

Maximum Power Dissipation

69 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Length

3.4mm

Typical Gate Charge @ Vgs

43.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

3.4mm

Transistor Material

Si

Number of Elements per Chip

1

Height

1.1mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™P P-Channel Power MOSFETs

The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više