Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
1.2 kA
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
2
Maximum Power Dissipation
1200 kW
Configuration
Half Bridge
Mounting Type
Screw Mount
Channel Type
N
Zemlja podrijetla
Germany
Informacije o stanju skladišta trenutno nisu dostupne.
Cena na upit
Infineon FF1200XTR17T2P5PBPSA1 Half Bridge IGBT, 1.2 kA 1700 V, Screw Mount
1
Cena na upit
Infineon FF1200XTR17T2P5PBPSA1 Half Bridge IGBT, 1.2 kA 1700 V, Screw Mount
Informacije o stanju skladišta trenutno nisu dostupne.
1
Informacije o stanju skladišta trenutno nisu dostupne.
Proverite ponovno kasnije.
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonMaximum Continuous Collector Current
1.2 kA
Maximum Collector Emitter Voltage
1700 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
2
Maximum Power Dissipation
1200 kW
Configuration
Half Bridge
Mounting Type
Screw Mount
Channel Type
N
Zemlja podrijetla
Germany