Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
925 A
Maximum Drain Source Voltage
3300 V
Series
XHP
Package Type
Tray
Mounting Type
Screw Mount
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Zemlja podrijetla
Germany
Informacije o stanju skladišta trenutno nisu dostupne.
P.O.A.
Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1
1
P.O.A.
Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1
Informacije o stanju skladišta trenutno nisu dostupne.
1
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
925 A
Maximum Drain Source Voltage
3300 V
Series
XHP
Package Type
Tray
Mounting Type
Screw Mount
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Zemlja podrijetla
Germany