Infineon IKZ75N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole

RS kataloški broj:: 162-3334robna marka: InfineonProizvođački broj:: IKZ75N65ES5XKSA1
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Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

395 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

40kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Maximum Operating Temperature

+175 °C

Energy Rating

2.8mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

4500pF

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P.O.A.

Infineon IKZ75N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole
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P.O.A.

Infineon IKZ75N65ES5XKSA1, P-Channel IGBT, 80 A 650 V, 4-Pin TO-247, Through Hole
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakiranja

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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±30V

Number of Transistors

1

Maximum Power Dissipation

395 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

40kHz

Transistor Configuration

Single

Dimensions

15.9 x 5.1 x 22.5mm

Maximum Operating Temperature

+175 °C

Energy Rating

2.8mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

4500pF