Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
550 V
Series
CoolMOS CP
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
199 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.65mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
China
Detalji o proizvodu
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 151,00
€ 3,02 komadno (u cijevi od 50) (bez PDV-a)
€ 188,75
€ 3,775 komadno (u cijevi od 50) (s PDV-om)
50
€ 151,00
€ 3,02 komadno (u cijevi od 50) (bez PDV-a)
€ 188,75
€ 3,775 komadno (u cijevi od 50) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
50
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
550 V
Series
CoolMOS CP
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
199 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.65mm
Typical Gate Charge @ Vgs
34 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Height
16.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
China
Detalji o proizvodu
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


