N-Channel MOSFET, 20.2 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R190C6XKSA1

RS kataloški broj:: 911-4984robna marka: InfineonProizvođački broj:: IPA60R190C6XKSA1
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

20.2 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.36mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Height

9.45mm

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

China

Detalji o proizvodu

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

N-Channel MOSFET, 20.2 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R190C6XKSA1

P.O.A.

N-Channel MOSFET, 20.2 A, 650 V, 3-Pin TO-220 FP Infineon IPA60R190C6XKSA1
Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

20.2 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.36mm

Typical Gate Charge @ Vgs

63 nC @ 10 V

Height

9.45mm

Series

CoolMOS C6

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

China

Detalji o proizvodu

Infineon CoolMOS™C6/C7 Power MOSFET

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više