N-Channel MOSFET, 130 A, 150 V, 7-Pin D2PAK-7 Infineon IPB065N15N3GATMA1
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
150 V
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Number of Elements per Chip
1
Transistor Material
Si
Length
10.31mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.45mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 5,50
Each (On a Reel of 1000) (bez PDV-a)
€ 6,875
Each (On a Reel of 1000) (s PDV-om)
1000
€ 5,50
Each (On a Reel of 1000) (bez PDV-a)
€ 6,875
Each (On a Reel of 1000) (s PDV-om)
1000
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
150 V
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Number of Elements per Chip
1
Transistor Material
Si
Length
10.31mm
Typical Gate Charge @ Vgs
70 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.45mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda