N-Channel MOSFET Transistor, 34 A, 200 V, 3-Pin D2PAK Infineon IPB320N20N3GATMA1
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
4.57mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Germany
Detalji o proizvodu
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Provjerite ponovno kasnije.
€ 2,60
Each (On a Reel of 1000) (bez PDV-a)
€ 3,25
Each (On a Reel of 1000) (s PDV-om)
1000
€ 2,60
Each (On a Reel of 1000) (bez PDV-a)
€ 3,25
Each (On a Reel of 1000) (s PDV-om)
1000
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
4.57mm
Series
OptiMOS 3
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
Germany
Detalji o proizvodu
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda