Infineon OptiMOS™-T N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1

RS kataloški broj:: 753-3018robna marka: InfineonProizvođački broj:: IPD30N10S3L34ATMA1Distrelec broj artikla: 30408789
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

OptiMOS™-T

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

24 nC @ 10 V

Width

6.22mm

Height

2.3mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 12,10

€ 1,21 komadno (u pakiranju od 10) (bez PDV-a)

€ 15,12

€ 1,512 komadno (u pakiranju od 10) (s PDV-om)

Infineon OptiMOS™-T N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1
Odaberite vrstu pakiranja

Standard

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10€ 12,10
20€ 24,20
30€ 28,20
40€ 37,60
50€ 47,00
60€ 56,40
70€ 65,80
80€ 75,20
90€ 84,60
100€ 94,00
110€ 103,40
120€ 112,80
130€ 104,00
140€ 112,00
150€ 120,00

€ 12,10

€ 1,21 komadno (u pakiranju od 10) (bez PDV-a)

€ 15,12

€ 1,512 komadno (u pakiranju od 10) (s PDV-om)

Infineon OptiMOS™-T N-Channel MOSFET, 30 A, 100 V, 3-Pin DPAK IPD30N10S3L34ATMA1

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Standard

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10€ 12,10
20€ 24,20
30€ 28,20
40€ 37,60
50€ 47,00
60€ 56,40
70€ 65,80
80€ 75,20
90€ 84,60
100€ 94,00
110€ 103,40
120€ 112,80
130€ 104,00
140€ 112,00
150€ 120,00

Informacije o stanju skladišta trenutno nisu dostupne.

količinajedinična cijenaPo pakiranje
10 - 20€ 1,21€ 12,10
30 - 120€ 0,94€ 9,40
130+€ 0,80€ 8,00

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

OptiMOS™-T

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

24 nC @ 10 V

Width

6.22mm

Height

2.3mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više