P-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK Infineon IPD50P03P4L11ATMA1
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
58 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.5mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Transistor Material
Si
Width
6.22mm
Series
OptiMOS P
Minimum Operating Temperature
-55 °C
Height
2.3mm
Detalji o proizvodu
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Cijena na upit
komadno (u pakiranju od 25) (bez PDV-a)
Standard
25
Cijena na upit
komadno (u pakiranju od 25) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
25
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
P
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
58 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.5mm
Typical Gate Charge @ Vgs
42 nC @ 10 V
Transistor Material
Si
Width
6.22mm
Series
OptiMOS P
Minimum Operating Temperature
-55 °C
Height
2.3mm
Detalji o proizvodu
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda