Infineon CoolMOS™ C6 N-Channel MOSFET, 10.6 A, 650 V, 3-Pin DPAK IPD60R380C6ATMA1
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.6 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C6
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.41mm
Zemlja podrijetla
Germany
Detalji o proizvodu
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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RSD 378.841
RSD 151,536 komad (u Reel od 2500) (bez PDV-a)
RSD 454.609
RSD 181,843 komad (u Reel od 2500) (s PDV-om)
2500
RSD 378.841
RSD 151,536 komad (u Reel od 2500) (bez PDV-a)
RSD 454.609
RSD 181,843 komad (u Reel od 2500) (s PDV-om)
2500
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Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10.6 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C6
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
380 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
83 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
2.41mm
Zemlja podrijetla
Germany
Detalji o proizvodu
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda