Infineon OptiMOS™ 3 N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1

RS kataloški broj:: 892-2100Probna marka: InfineonProizvođački broj:: IPP032N06N3GXKSA1
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 3

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

188 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

124 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.57mm

Transistor Material

Si

Forward Diode Voltage

1.2V

Height

15.95mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 62,50

€ 2,50 Each (Supplied in a Tube) (bez PDV-a)

€ 78,12

€ 3,125 Each (Supplied in a Tube) (s PDV-om)

Infineon OptiMOS™ 3 N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1
Odaberite vrstu pakiranja

Proizvodno pakiranje (cijev)

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

25

Dostupno u više komada 5
25€ 62,50
30€ 75,00
35€ 87,50
40€ 100,00
45€ 112,50
50€ 122,50
55€ 134,75
60€ 147,00
65€ 159,25
70€ 171,50
75€ 183,75
80€ 196,00
85€ 208,25
90€ 220,50
95€ 232,75

€ 62,50

€ 2,50 Each (Supplied in a Tube) (bez PDV-a)

€ 78,12

€ 3,125 Each (Supplied in a Tube) (s PDV-om)

Infineon OptiMOS™ 3 N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Proizvodno pakiranje (cijev)

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

25

Dostupno u više komada 5
25€ 62,50
30€ 75,00
35€ 87,50
40€ 100,00
45€ 112,50
50€ 122,50
55€ 134,75
60€ 147,00
65€ 159,25
70€ 171,50
75€ 183,75
80€ 196,00
85€ 208,25
90€ 220,50
95€ 232,75

Informacije o stanju skladišta trenutno nisu dostupne.

količinajedinična cijenaPo cijev
25 - 45€ 2,50€ 12,50
50 - 120€ 2,45€ 12,25
125 - 245€ 2,35€ 11,75
250+€ 2,30€ 11,50

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 3

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

188 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

124 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.57mm

Transistor Material

Si

Forward Diode Voltage

1.2V

Height

15.95mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više