Infineon OptiMOS™ 3 N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 IPP041N12N3GXKSA1
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
120 V
Series
OptiMOS™ 3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
158 nC
Maximum Operating Temperature
+175 °C
Width
4.57mm
Transistor Material
Si
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 103,00
€ 5,15 Each (Supplied in a Tube) (bez PDV-a)
€ 128,75
€ 6,438 Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakiranje (cijev)
20
€ 103,00
€ 5,15 Each (Supplied in a Tube) (bez PDV-a)
€ 128,75
€ 6,438 Each (Supplied in a Tube) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (cijev)
20
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 20 - 98 | € 5,15 | € 10,30 |
| 100 - 198 | € 4,65 | € 9,30 |
| 200 - 498 | € 4,60 | € 9,20 |
| 500+ | € 4,25 | € 8,50 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
120 V
Series
OptiMOS™ 3
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.1 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
158 nC
Maximum Operating Temperature
+175 °C
Width
4.57mm
Transistor Material
Si
Height
15.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Detalji o proizvodu
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda