Infineon OptiMOS™ N-Channel MOSFET, 80 A, 75 V, 3-Pin TO-220 IPP80N08S2L07AKSA1
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Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
75 V
Series
OptiMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
183 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 3.130,00
€ 6,26 komadno (u cijevi od 500) (bez PDV-a)
€ 3.912,50
€ 7,825 komadno (u cijevi od 500) (s PDV-om)
500
€ 3.130,00
€ 6,26 komadno (u cijevi od 500) (bez PDV-a)
€ 3.912,50
€ 7,825 komadno (u cijevi od 500) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
500
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
75 V
Series
OptiMOS™
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
6.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.36mm
Typical Gate Charge @ Vgs
183 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.95mm
Minimum Operating Temperature
-55 °C
Detalji o proizvodu
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda