Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
CoolMOS CP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
5.21mm
Length
16.13mm
Number of Elements per Chip
1
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 186,00
€ 6,20 komadno (u cijevi od 30) (bez PDV-a)
€ 232,50
€ 7,75 komadno (u cijevi od 30) (s PDV-om)
30
€ 186,00
€ 6,20 komadno (u cijevi od 30) (bez PDV-a)
€ 232,50
€ 7,75 komadno (u cijevi od 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
30
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po cijev |
|---|---|---|
| 30 - 30 | € 6,20 | € 186,00 |
| 60 - 120 | € 5,98 | € 179,40 |
| 150+ | € 5,96 | € 178,80 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Series
CoolMOS CP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
39 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
5.21mm
Length
16.13mm
Number of Elements per Chip
1
Height
21.1mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Zemlja podrijetla
Malaysia
Detalji o proizvodu
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.


