Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220AB
Series
IRF1407PbF
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
4.83mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
16.51mm
Forward Diode Voltage
1.3V
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 3,10
komadno (u cijevi od 50) (bez PDV-a)
€ 3,875
komadno (u cijevi od 50) (s PDV-om)
50
€ 3,10
komadno (u cijevi od 50) (bez PDV-a)
€ 3,875
komadno (u cijevi od 50) (s PDV-om)
50
Kupujte na veliko
količina | jedinična cijena | Po cijev |
---|---|---|
50 - 50 | € 3,10 | € 155,00 |
100 - 200 | € 2,55 | € 127,50 |
250 - 450 | € 2,50 | € 125,00 |
500 - 950 | € 2,40 | € 120,00 |
1000+ | € 2,30 | € 115,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
75 V
Package Type
TO-220AB
Series
IRF1407PbF
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Width
4.83mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Height
16.51mm
Forward Diode Voltage
1.3V