N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB Infineon IRF2805PBF

RS kataloški broj:: 784-0274robna marka: InfineonProizvođački broj:: IRF2805PBF
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

150 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

16.51mm

Detalji o proizvodu

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 3,10

komadno (bez PDV-a)

€ 3,88

komadno (s PDV-om)

N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB Infineon IRF2805PBF
Odaberite vrstu pakiranja

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1€ 3,10
2€ 6,20
3€ 9,30
4€ 12,40
5€ 15,50
6€ 18,60
7€ 21,70
8€ 24,80
9€ 27,90
10€ 29,50
11€ 32,45
12€ 35,40
13€ 38,35
14€ 41,30
15€ 44,25

€ 3,10

komadno (bez PDV-a)

€ 3,88

komadno (s PDV-om)

N-Channel MOSFET, 75 A, 55 V, 3-Pin TO-220AB Infineon IRF2805PBF
Informacije o stanju skladišta trenutno nisu dostupne.
Odaberite vrstu pakiranja

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 1.

Proizvodnja -

Dostupno u više komada 1.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

1

Dostupno u više komada 1
1€ 3,10
2€ 6,20
3€ 9,30
4€ 12,40
5€ 15,50
6€ 18,60
7€ 21,70
8€ 24,80
9€ 27,90
10€ 29,50
11€ 32,45
12€ 35,40
13€ 38,35
14€ 41,30
15€ 44,25

Kupujte na veliko

količinajedinična cijena
1 - 9€ 3,10
10 - 49€ 2,95
50 - 99€ 2,90
100+€ 2,80

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PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

150 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

16.51mm

Detalji o proizvodu

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više