N-Channel MOSFET, 59 A, 100 V, 3-Pin D2PAK Infineon IRF3710ZSTRLPBF

RS kataloški broj:: 162-3273robna marka: InfineonProizvođački broj:: IRF3710ZSTRLPBF
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

IRF3710ZS

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

82 nC @ 10 V

Width

9.65mm

Number of Elements per Chip

1

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

4.83mm

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Informacije o stanju skladišta trenutno nisu dostupne.

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€ 1,24

Each (On a Reel of 800) (bez PDV-a)

€ 1,55

Each (On a Reel of 800) (s PDV-om)

N-Channel MOSFET, 59 A, 100 V, 3-Pin D2PAK Infineon IRF3710ZSTRLPBF

€ 1,24

Each (On a Reel of 800) (bez PDV-a)

€ 1,55

Each (On a Reel of 800) (s PDV-om)

N-Channel MOSFET, 59 A, 100 V, 3-Pin D2PAK Infineon IRF3710ZSTRLPBF
Informacije o stanju skladišta trenutno nisu dostupne.

Kupujte na veliko

količinajedinična cijenaPo kolut
800 - 800€ 1,24€ 992,00
1600+€ 1,20€ 960,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK (TO-263)

Series

IRF3710ZS

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Typical Gate Charge @ Vgs

82 nC @ 10 V

Width

9.65mm

Number of Elements per Chip

1

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

4.83mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more