Infineon HEXFET N-Channel MOSFET, 20 A, 30 V, 8-Pin SOIC IRF7832TRPBF

RS kataloški broj:: 827-3896robna marka: InfineonProizvođački broj:: IRF7832TRPBF
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.32V

Minimum Gate Threshold Voltage

1.39V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Maximum Operating Temperature

+155 °C

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Detalji o proizvodu

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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KM 18,38

KM 1,838 Each (In a Pack of 10) (bez PDV-a)

KM 21,51

KM 2,151 Each (In a Pack of 10) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 20 A, 30 V, 8-Pin SOIC IRF7832TRPBF
Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10KM 18,38
20KM 36,77
30KM 55,15
40KM 73,54
50KM 91,92
60KM 110,31
70KM 128,69
80KM 147,08
90KM 165,46
100KM 183,85
110KM 202,23
120KM 220,61
130KM 239,00
140KM 257,38
150KM 275,77

KM 18,38

KM 1,838 Each (In a Pack of 10) (bez PDV-a)

KM 21,51

KM 2,151 Each (In a Pack of 10) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 20 A, 30 V, 8-Pin SOIC IRF7832TRPBF

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakovanja

Standard

Odaberite vrstu pakovanja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

10

Dostupno u više komada 10
10KM 18,38
20KM 36,77
30KM 55,15
40KM 73,54
50KM 91,92
60KM 110,31
70KM 128,69
80KM 147,08
90KM 165,46
100KM 183,85
110KM 202,23
120KM 220,61
130KM 239,00
140KM 257,38
150KM 275,77

Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.32V

Minimum Gate Threshold Voltage

1.39V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Maximum Operating Temperature

+155 °C

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm

Detalji o proizvodu

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više