Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
60 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
9.02mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 2,00
komadno (u cijevi od 50) (bez PDV-a)
€ 2,50
komadno (u cijevi od 50) (s PDV-om)
50
€ 2,00
komadno (u cijevi od 50) (bez PDV-a)
€ 2,50
komadno (u cijevi od 50) (s PDV-om)
50
Kupujte na veliko
količina | jedinična cijena | Po cijev |
---|---|---|
50 - 50 | € 2,00 | € 100,00 |
100 - 200 | € 1,81 | € 90,50 |
250 - 450 | € 1,76 | € 88,00 |
500+ | € 1,73 | € 86,50 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
60 V
Series
HEXFET
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
120 nC @ 10 V
Width
4.83mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
9.02mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.