Infineon HEXFET N-Channel MOSFET, 130 A, 100 V, 3-Pin TO-220AB IRFB4310PBF
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
170 nC @ 10 V
Width
4.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
9.02mm
Detalji o proizvodu
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 35,00
€ 3,50 Each (Supplied in a Tube) (bez PDV-a)
€ 43,75
€ 4,38 Each (Supplied in a Tube) (s PDV-om)
Proizvodno pakiranje (cijev)
10
€ 35,00
€ 3,50 Each (Supplied in a Tube) (bez PDV-a)
€ 43,75
€ 4,38 Each (Supplied in a Tube) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Proizvodno pakiranje (cijev)
10
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena |
|---|---|
| 10 - 24 | € 3,50 |
| 25 - 49 | € 3,40 |
| 50 - 99 | € 3,25 |
| 100+ | € 3,20 |
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
N
Maximum Continuous Drain Current
130 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.66mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
170 nC @ 10 V
Width
4.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
9.02mm
Detalji o proizvodu
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda