Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK IRFR9024NTRPBF

RS kataloški broj:: 827-4088robna marka: InfineonProizvođački broj:: IRFR9024NTRPBF
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

6.22mm

Forward Diode Voltage

1.6V

Height

2.39mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 22,60

€ 1,13 komadno (u pakiranju od 20) (bez PDV-a)

€ 28,25

€ 1,412 komadno (u pakiranju od 20) (s PDV-om)

Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK IRFR9024NTRPBF
Odaberite vrstu pakiranja

Standard

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 20.

Proizvodnja -

Dostupno u više komada 20.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 20
20€ 22,60
40€ 45,20
60€ 67,80
80€ 90,40
100€ 90,00
120€ 108,00
140€ 126,00
160€ 144,00
180€ 162,00
200€ 176,00
220€ 193,60
240€ 211,20
260€ 228,80
280€ 246,40
300€ 264,00

€ 22,60

€ 1,13 komadno (u pakiranju od 20) (bez PDV-a)

€ 28,25

€ 1,412 komadno (u pakiranju od 20) (s PDV-om)

Infineon HEXFET P-Channel MOSFET, 11 A, 55 V, 3-Pin DPAK IRFR9024NTRPBF

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Standard

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 20.

Proizvodnja -

Dostupno u više komada 20.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 20
20€ 22,60
40€ 45,20
60€ 67,80
80€ 90,40
100€ 90,00
120€ 108,00
140€ 126,00
160€ 144,00
180€ 162,00
200€ 176,00
220€ 193,60
240€ 211,20
260€ 228,80
280€ 246,40
300€ 264,00

Informacije o stanju skladišta trenutno nisu dostupne.

količinajedinična cijenaPo pakiranje
20 - 80€ 1,13€ 22,60
100 - 180€ 0,90€ 18,00
200 - 480€ 0,88€ 17,60
500 - 980€ 0,85€ 17,00
1000+€ 0,82€ 16,40

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

55 V

Series

HEXFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

6.22mm

Forward Diode Voltage

1.6V

Height

2.39mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više