Infineon HEXFET N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK IRL2910STRLPBF

RS kataloški broj:: 830-3290robna marka: InfineonProizvođački broj:: IRL2910STRLPBFDistrelec broj artikla: 30341390
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Length

10.67mm

Typical Gate Charge @ Vgs

140 nC @ 5 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Width

9.65mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 22,35

€ 4,47 komadno (u pakiranju od 5) (bez PDV-a)

€ 27,94

€ 5,588 komadno (u pakiranju od 5) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK IRL2910STRLPBF
Odaberite vrstu pakiranja

Standard

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

5

Dostupno u više komada 5
5€ 22,35
10€ 44,70
15€ 67,05
20€ 89,40
25€ 100,75
30€ 120,90
35€ 141,05
40€ 161,20
45€ 181,35
50€ 198,50
55€ 218,35
60€ 238,20
65€ 258,05
70€ 277,90
75€ 297,75

€ 22,35

€ 4,47 komadno (u pakiranju od 5) (bez PDV-a)

€ 27,94

€ 5,588 komadno (u pakiranju od 5) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 55 A, 100 V, 3-Pin D2PAK IRL2910STRLPBF

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Standard

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

5

Dostupno u više komada 5
5€ 22,35
10€ 44,70
15€ 67,05
20€ 89,40
25€ 100,75
30€ 120,90
35€ 141,05
40€ 161,20
45€ 181,35
50€ 198,50
55€ 218,35
60€ 238,20
65€ 258,05
70€ 277,90
75€ 297,75

Informacije o stanju skladišta trenutno nisu dostupne.

količinajedinična cijenaPo pakiranje
5 - 20€ 4,47€ 22,35
25 - 45€ 4,03€ 20,15
50 - 120€ 3,97€ 19,85
125 - 245€ 3,84€ 19,20
250+€ 3,68€ 18,40

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

100 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Length

10.67mm

Typical Gate Charge @ Vgs

140 nC @ 5 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Width

9.65mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više