Infineon HEXFET N-Channel MOSFET, 4.1 A, 20 V, 3-Pin SOT-23 IRLML6246TRPBF

RS kataloški broj:: 737-7221robna marka: InfineonProizvođački broj:: IRLML6246TRPBFDistrelec broj artikla: 30284104
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Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

N-Channel Power MOSFET 12V to 25V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 7,80

€ 0,39 komadno (u pakiranju od 20) (bez PDV-a)

€ 9,75

€ 0,488 komadno (u pakiranju od 20) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 4.1 A, 20 V, 3-Pin SOT-23 IRLML6246TRPBF
Odaberite vrstu pakiranja

Standard

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 20.

Proizvodnja -

Dostupno u više komada 20.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 20
20€ 7,80
40€ 15,60
60€ 23,40
80€ 31,20
100€ 39,00
120€ 46,80
140€ 54,60
160€ 62,40
180€ 70,20
200€ 76,00
220€ 83,60
240€ 91,20
260€ 98,80
280€ 106,40
300€ 114,00

€ 7,80

€ 0,39 komadno (u pakiranju od 20) (bez PDV-a)

€ 9,75

€ 0,488 komadno (u pakiranju od 20) (s PDV-om)

Infineon HEXFET N-Channel MOSFET, 4.1 A, 20 V, 3-Pin SOT-23 IRLML6246TRPBF

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Standard

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 20.

Proizvodnja -

Dostupno u više komada 20.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

20

Dostupno u više komada 20
20€ 7,80
40€ 15,60
60€ 23,40
80€ 31,20
100€ 39,00
120€ 46,80
140€ 54,60
160€ 62,40
180€ 70,20
200€ 76,00
220€ 83,60
240€ 91,20
260€ 98,80
280€ 106,40
300€ 114,00

Informacije o stanju skladišta trenutno nisu dostupne.

količinajedinična cijenaPo pakiranje
20 - 180€ 0,39€ 7,80
200 - 480€ 0,38€ 7,60
500 - 980€ 0,25€ 5,00
1000 - 1980€ 0,22€ 4,40
2000+€ 0,20€ 4,00

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

N

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

66 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Height

1.02mm

Minimum Operating Temperature

-55 °C

Detalji o proizvodu

N-Channel Power MOSFET 12V to 25V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više