Infineon HEXFET P-Channel MOSFET, 6.9 A, 20 V, 6-Pin TSOP-6 IRLTS2242TRPBF
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
P
Maximum Continuous Drain Current
6.9 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.75mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.3mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 12,90
€ 0,43 komadno (u pakiranju od 30) (bez PDV-a)
€ 16,12
€ 0,538 komadno (u pakiranju od 30) (s PDV-om)
Standard
30
€ 12,90
€ 0,43 komadno (u pakiranju od 30) (bez PDV-a)
€ 16,12
€ 0,538 komadno (u pakiranju od 30) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
30
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
InfineonChannel Type
P
Maximum Continuous Drain Current
6.9 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
TSOP-6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
55 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.75mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.3mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda