Infineon SIPMOS® P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK SPD08P06PGBTMA1

RS kataloški broj:: 462-3247Probna marka: InfineonProizvođački broj:: SPD08P06PGBTMA1
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

P

Maximum Continuous Drain Current

8.8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

Height

2.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.55V

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 74,00

€ 0,74 Each (Supplied on a Reel) (bez PDV-a)

€ 92,50

€ 0,925 Each (Supplied on a Reel) (s PDV-om)

Infineon SIPMOS® P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK SPD08P06PGBTMA1
Odaberite vrstu pakiranja

Proizvodno pakiranje (kolut)

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

100

Dostupno u više komada 10
100€ 74,00
110€ 81,40
120€ 88,80
130€ 96,20
140€ 103,60
150€ 111,00
160€ 118,40
170€ 125,80
180€ 133,20
190€ 140,60
200€ 148,00
210€ 155,40
220€ 162,80
230€ 170,20
240€ 177,60

€ 74,00

€ 0,74 Each (Supplied on a Reel) (bez PDV-a)

€ 92,50

€ 0,925 Each (Supplied on a Reel) (s PDV-om)

Infineon SIPMOS® P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK SPD08P06PGBTMA1

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Proizvodno pakiranje (kolut)

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 10.

Proizvodnja -

Dostupno u više komada 10.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

100

Dostupno u više komada 10
100€ 74,00
110€ 81,40
120€ 88,80
130€ 96,20
140€ 103,60
150€ 111,00
160€ 118,40
170€ 125,80
180€ 133,20
190€ 140,60
200€ 148,00
210€ 155,40
220€ 162,80
230€ 170,20
240€ 177,60

Informacije o stanju skladišta trenutno nisu dostupne.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

P

Maximum Continuous Drain Current

8.8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Series

SIPMOS®

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

10 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Number of Elements per Chip

1

Automotive Standard

AEC-Q101

Height

2.3mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.55V

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više