Infineon SIPMOS® P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1

RS kataloški broj:: 823-5560robna marka: InfineonProizvođački broj:: SPP15P10PLHXKSA1Distrelec broj artikla: 30341447
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Prikaži sve u MOSFETs

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

P

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

100 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.95mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Malaysia

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 14,55

€ 2,91 komadno (u pakiranju od 5) (bez PDV-a)

€ 18,19

€ 3,638 komadno (u pakiranju od 5) (s PDV-om)

Infineon SIPMOS® P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1
Odaberite vrstu pakiranja

Standard

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

5

Dostupno u više komada 5
5€ 14,55
10€ 29,10
15€ 43,65
20€ 58,20
25€ 72,75
30€ 87,30
35€ 101,85
40€ 116,40
45€ 130,95
50€ 133,00
55€ 146,30
60€ 159,60
65€ 172,90
70€ 186,20
75€ 199,50

€ 14,55

€ 2,91 komadno (u pakiranju od 5) (bez PDV-a)

€ 18,19

€ 3,638 komadno (u pakiranju od 5) (s PDV-om)

Infineon SIPMOS® P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 SPP15P10PLHXKSA1

Informacije o stanju skladišta trenutno nisu dostupne.

Odaberite vrstu pakiranja

Standard

Odaberite vrstu pakiranja

Standard - each

Dostupno u više komada 5.

Proizvodnja -

Dostupno u više komada 5.

Preporuča se za narudžbu u velikim količinama. Predmeti su pakirani spremni za umetanje u strojeve, omogućujući vam da poboljšate učinkovitost proizvodnje.

5

Dostupno u više komada 5
5€ 14,55
10€ 29,10
15€ 43,65
20€ 58,20
25€ 72,75
30€ 87,30
35€ 101,85
40€ 116,40
45€ 130,95
50€ 133,00
55€ 146,30
60€ 159,60
65€ 172,90
70€ 186,20
75€ 199,50

Informacije o stanju skladišta trenutno nisu dostupne.

količinajedinična cijenaPo pakiranje
5 - 45€ 2,91€ 14,55
50 - 120€ 2,66€ 13,30
125 - 245€ 2,59€ 12,95
250 - 495€ 2,50€ 12,50
500+€ 2,43€ 12,15

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više

Tehnička dokumentacija

Tehnički podaci

Proizvođač

Infineon

Channel Type

P

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

100 V

Series

SIPMOS®

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

47 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.95mm

Minimum Operating Temperature

-55 °C

Zemlja podrijetla

Malaysia

Detalji o proizvodu

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Zamisliti. Stvoriti. Surađivati

PRIDRUŽITE SE BESPLATNO

Bez skrivenih naknada!

design-spark
design-spark
  • Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
  • Pregledajte i doprinesite sadržaju internet stranice i foruma
  • Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Kliknite ovdje kako biste saznali više