International Rectifier StrongIRFET N-Channel MOSFET Transistor, 225 A, 240 A, 60 V, 7-Pin D2PAK IRFS7534TRL7PP
Tehnička dokumentacija
Tehnički podaci
Proizvođač
International RectifierChannel Type
N
Maximum Continuous Drain Current
225 A, 240 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.95 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
294 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Minimum Operating Temperature
-55 °C
Height
11.33mm
Zemlja podrijetla
Mexico
Detalji o proizvodu
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Cijena na upit
Each (On a Reel of 2) (bez PDV-a)
2
Cijena na upit
Each (On a Reel of 2) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
2
Informacije o stanju skladišta trenutno nisu dostupne.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda
Tehnička dokumentacija
Tehnički podaci
Proizvođač
International RectifierChannel Type
N
Maximum Continuous Drain Current
225 A, 240 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
D2PAK
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.95 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
294 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
10.67mm
Typical Gate Charge @ Vgs
200 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Minimum Operating Temperature
-55 °C
Height
11.33mm
Zemlja podrijetla
Mexico
Detalji o proizvodu
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Zamisliti. Stvoriti. Surađivati
PRIDRUŽITE SE BESPLATNO
Bez skrivenih naknada!
- Preuzmite i koristite naš softver DesignSpark za svoje PCB i 3D mehaničke dizajne
- Pregledajte i doprinesite sadržaju internet stranice i foruma
- Preuzmite 3D modele, sheme i otiske s više od milijun proizvoda