Tehnička dokumentacija
Tehnički podaci
Proizvođač
IXYSProduct Type
IGBT Module
Configuration
Single
Package Type
Y4-M5
Channel Type
Type N
Pin Count
7
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
34 mm
Length
94mm
Height
30mm
Detalji o proizvodu
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informacije o stanju skladišta trenutno nisu dostupne.
€ 421,50
€ 70,25 komadno (u kutiji od 6) (bez PDV-a)
€ 526,88
€ 87,812 komadno (u kutiji od 6) (s PDV-om)
6
€ 421,50
€ 70,25 komadno (u kutiji od 6) (bez PDV-a)
€ 526,88
€ 87,812 komadno (u kutiji od 6) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
6
Tehnička dokumentacija
Tehnički podaci
Proizvođač
IXYSProduct Type
IGBT Module
Configuration
Single
Package Type
Y4-M5
Channel Type
Type N
Pin Count
7
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
34 mm
Length
94mm
Height
30mm
Detalji o proizvodu
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.


