Tehnička dokumentacija
Tehnički podaci
Proizvođač
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y3 DCB
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
110 x 62 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 198,00
komadno (u kutiji od 2) (bez PDV-a)
€ 247,50
komadno (u kutiji od 2) (s PDV-om)
2
€ 198,00
komadno (u kutiji od 2) (bez PDV-a)
€ 247,50
komadno (u kutiji od 2) (s PDV-om)
2
Kupujte na veliko
količina | jedinična cijena | Po kutija |
---|---|---|
2 - 8 | € 198,00 | € 396,00 |
10+ | € 195,00 | € 390,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
IXYSMaximum Continuous Collector Current
270 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
Y3 DCB
Configuration
Single
Mounting Type
Panel Mount
Channel Type
N
Pin Count
5
Transistor Configuration
Single
Dimensions
110 x 62 x 30mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+150 °C
Detalji o proizvodu
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.