Tehnička dokumentacija
Tehnički podaci
Proizvođač
MicrochipProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
1.1A
Maximum Drain Source Voltage Vds
250V
Package Type
DFN
Series
DN2625
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
3.5Ω
Channel Mode
Depletion
Minimum Operating Temperature
150°C
Typical Gate Charge Qg @ Vgs
7.04nC
Forward Voltage Vf
1.8V
Maximum Operating Temperature
-55°C
Transistor Configuration
Single
Height
0.85mm
Length
5.1mm
Standards/Approvals
No
Number of Elements per Chip
1
Automotive Standard
No
Detalji o proizvodu
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.
MOSFET Transistors, Microchip
Informacije o stanju skladišta trenutno nisu dostupne.
€ 16,40
€ 3,28 komadno (u pakiranju od 5) (bez PDV-a)
€ 20,50
€ 4,10 komadno (u pakiranju od 5) (s PDV-om)
Standard
5
€ 16,40
€ 3,28 komadno (u pakiranju od 5) (bez PDV-a)
€ 20,50
€ 4,10 komadno (u pakiranju od 5) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
5
Tehnička dokumentacija
Tehnički podaci
Proizvođač
MicrochipProduct Type
Power MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
1.1A
Maximum Drain Source Voltage Vds
250V
Package Type
DFN
Series
DN2625
Mount Type
Surface
Pin Count
8
Maximum Drain Source Resistance Rds
3.5Ω
Channel Mode
Depletion
Minimum Operating Temperature
150°C
Typical Gate Charge Qg @ Vgs
7.04nC
Forward Voltage Vf
1.8V
Maximum Operating Temperature
-55°C
Transistor Configuration
Single
Height
0.85mm
Length
5.1mm
Standards/Approvals
No
Number of Elements per Chip
1
Automotive Standard
No
Detalji o proizvodu
DN2625 N-Channel MOSFET Transistors
The Microchip DN2625 is a low threshold depletion-mode (normally-on) MOSFET transistor utilizing an advanced vertical DMOS structure. The design combines the power handling capabilities of a Bipolar Transistor with the high input impedance and positive temperature coefficient of MOS devices.


