Tehnička dokumentacija
Tehnički podaci
Proizvođač
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
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Provjerite ponovno kasnije.
€ 0,85
Each (Supplied in a Bag) (bez PDV-a)
€ 1,062
Each (Supplied in a Bag) (s PDV-om)
20
€ 0,85
Each (Supplied in a Bag) (bez PDV-a)
€ 1,062
Each (Supplied in a Bag) (s PDV-om)
20
Kupujte na veliko
količina | jedinična cijena | Po vrećica |
---|---|---|
20 - 20 | € 0,85 | € 17,00 |
40 - 80 | € 0,82 | € 16,40 |
100+ | € 0,77 | € 15,40 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Detalji o proizvodu
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.