Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaChannel Type
P
Maximum Continuous Drain Current
225 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Width
3.7mm
Transistor Material
Si
Height
1.7mm
Zemlja podrijetla
China
Detalji o proizvodu
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Cijena na upit
komadno (u pakiranju od 10) (bez PDV-a)
Standard
10
Cijena na upit
komadno (u pakiranju od 10) (bez PDV-a)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
10
Informacije o stanju skladišta trenutno nisu dostupne.
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaChannel Type
P
Maximum Continuous Drain Current
225 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.8V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Width
3.7mm
Transistor Material
Si
Height
1.7mm
Zemlja podrijetla
China
Detalji o proizvodu


