Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
Informacije o stanju skladišta trenutno nisu dostupne.
Provjerite ponovno kasnije.
€ 0,13
Each (On a Reel of 3000) (bez PDV-a)
€ 0,162
Each (On a Reel of 3000) (s PDV-om)
3000
€ 0,13
Each (On a Reel of 3000) (bez PDV-a)
€ 0,162
Each (On a Reel of 3000) (s PDV-om)
3000
Kupujte na veliko
količina | jedinična cijena | Po kolut |
---|---|---|
3000 - 3000 | € 0,13 | € 390,00 |
6000 - 12000 | € 0,12 | € 360,00 |
15000+ | € 0,10 | € 300,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaChannel Type
N
Maximum Continuous Drain Current
360 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
0.48V
Maximum Power Dissipation
420 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
3mm
Typical Gate Charge @ Vgs
0.6 nC @ 4.5 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Zemlja podrijetla
China
Detalji o proizvodu