Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-150 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.4 W
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
-200 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Zemlja podrijetla
China
Detalji o proizvodu
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 12,80
€ 0,64 komadno (u pakiranju od 20) (bez PDV-a)
€ 16,00
€ 0,80 komadno (u pakiranju od 20) (s PDV-om)
Standard
20
€ 12,80
€ 0,64 komadno (u pakiranju od 20) (bez PDV-a)
€ 16,00
€ 0,80 komadno (u pakiranju od 20) (s PDV-om)
Informacije o stanju skladišta trenutno nisu dostupne.
Standard
20
Informacije o stanju skladišta trenutno nisu dostupne.
| količina | jedinična cijena | Po pakiranje |
|---|---|---|
| 20 - 20 | € 0,64 | € 12,80 |
| 40 - 80 | € 0,61 | € 12,20 |
| 100+ | € 0,40 | € 8,00 |
Tehnička dokumentacija
Tehnički podaci
Proizvođač
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-150 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.4 W
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
-200 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Zemlja podrijetla
China
Detalji o proizvodu
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


